CY15B104Q-LHXI Memory Size, Cypress Semiconductor 4Mbit Serial-SPI FRAM Memory 8-Pin DFN, CY15B104Q-LHXI

4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K font face=\"symbol\""´/font 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric processVery fast serial peripheral interface (SPI)Up to 40-MHz frequency Direct hardware replacement for serial flash and EEPROMSupports SPI mode 0 (0, 0) and mode 3 (1, 1)Sophisticated write protection schemeHardware protection using the Write Protect (WP) pinSoftware protection using Write Disable instructionSoftware block protection for 1/4, 1/2, or entire arrayDevice IDManufacturer ID and Product IDLow power consumption300 A active current at 1 MHz100 A (typ) standby current3 A (typ) sleep mode current Low-voltage operation: VDD = 2.0 V to 3.6 VIndustrial temperature: –40 °C to +85 °CPackages8-pin small outline integrated circuit (SOIC) package 8-pin thin dual flat no leads (TDFN) package