* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K font face=\"symbol\""´/font 8Virtually unlimited endurance of 10 trillion (1013) read/write cycles121-year data retentionNoDelay™ writesAdvanced high-reliability ferroelectric processFast serial peripheral interface (SPI)Up to 50 MHz frequencySupports SPI mode 0 (0, 0) and mode 3 (1, 1)Sophisticated write protection schemeHardware protection using the Write Protect (WP) pinSoftware protection using Write Disable (WRDI) instructionSoftware block protection for 1/4, 1/2, or entire arrayDevice ID and Serial NumberDevice ID includes manufacturer ID and product IDUnique IDSerial NumberDedicated 256-byte special sector F-RAMDedicated special sector write and readStored content can survive up to 3 standard reflow soldering cyclesLow-power consumption3.7 mA (typ) active current at 40 MHz2.7 μA (typ) standby current1.1 μA (typ) Deep Power Down mode current0.1 μA (typ) Hibernate mode currentLow-voltage operation:CY15V102QN: VDD = 1.71 V to 1.89 VCY15B102QN: VDD = 1.8 V to 3.6 VAutomotive operating temperature: -40 °C to +125 °CAEC-Q100 Grade 1 compliant8-pin Small Outline Integrated Circuit (SOIC) package
Datasheet CY15V102QN-50SXE"Самовывоз со склада поставщика в Екатеринбурге | Забираете сами или вызываете курьера |
ТК Деловые Линии | от 500 руб |
Курьером EMS Почта России | от 500 руб |
Другой транспортной компанией | По согласованию |