ON Semiconductor FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole, Транзистор

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

The ON Semiconductor FGH30S130P is a 1300V, 30A IGBT featuring shorted-anode and field stop trench technologies. Soft switching applications are ideal for the FGH30S130P, with efficient conduction and high switching performance characteristics. The FGH30S130P IGBT can work in a parallel configuration and offers great avalanche capabilities.
The FGH30S130P IGBT is designed for use in induction heating, microwave ovens and other household appliances.

• TO-247 package
• High speed switching
• Superior conduction
• Low saturation voltage
• High input impedance

Versions Available:
864-8849 - pack of 2
166-3300 - tube of 30

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

FGH30S130P, 1300V, 30A Shorted-Anode IGBT

ESD Control Selection Guide V1