IXFN80N50Q3 Channel Type, N-Channel MOSFET, 63 A, 500 V, 4-Pin SOT-227B IXYS IXFN80N50Q3

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diodeLow RDS(on) and QG (gate charge)Low intrinsic gate resistanceIndustry standard packagesLow package inductanceHigh power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS