PWD13F60TR Configuration, STMicroelectronics PWD13F60TR Motor Driver IC 28-Pin, VFQFPN

The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration. The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space.
Power system-in-package integrating gate drivers and high-voltage power MOSFETsWide driver supply voltage down to 6.5 VUVLO protection on supply voltage3.3 V to 15 V compatible inputs with hysteresis and pull-downInterlocking function to prevent cross conductionInternal bootstrap diodeOutputs in phase with inputsVery compact and simplified layoutFlexible, easy and fast design