* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
Infineon MOSFET
The Infineon through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 71W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Ease of use
• Field proven CoolMOS quality
• High efficiency and power density
• High reliability
• Low gate charge (Qg)
• Low specific on state resistance
• Operating temperature ranges between -55°C and 150°C
• Outstanding cost to performance
• Very low energy storage in output capacitance (Eoss) at 400V
Applications
• Adapter
• PC power
• Server power supplies
• Telecommunication
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC
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