2N6661 Channel Type, N-Channel MOSFET, 350 mA, 90 V, 3-Pin TO-39 Microchip 2N6661

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdownLow power drive requirementEase of parallelingLow CISS and fast switching speedsExcellent thermal stabilityIntegral source-drain diodeHigh input impedance and high gain