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P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3, МОП-транзистор

1783853
Номер производителя: Si2319DDS-T1-GE3Производитель: Vishay Siliconix
Цена за шт. (норма упаковки 50 шт)
108.50 руб. (С НДС) *

Срок поставки: 4-6 недель

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* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 75mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications

• Battery switch
• Load switch
• Motor drive control

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

Техническая спецификация
pdfDatasheet