* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
ON Semiconductor MOSFET
The ON Semiconductor DPAK-3/TO252-3 surface mount N-channel MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has drain-source resistance of 22mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 160W. The MOSFET has a driving voltage of 10V. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Compact design
• Lead (Pb) free
• Low QG and capacitance
• Low QG and capacitance to minimize driver losses
• Low RDS (on) to minimize conduction losses
• Minimize conduction losses
• Minimize driver losses
• Operating temperature ranges between -55°C and 175°C
• Small footprint (5x6 mm)
Applications
• Automotive engine control
• Distributed power architectures and VRM
• Integrated starter/alternator
• Power train management
• Primary switch for 12V systems
• Solenoid and motor drivers
Certifications
• AEC−Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS certified
DatasheetDatasheet FDD86250-F085