* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
ON Semiconductor MOSFET
The ON Semiconductor PQFN-4 surface mount N-channel MOSFET is a new age product with a drain-source voltage of 650V and a maximum gate-source voltage of 30V. It has drain-source resistance of 180mohm at a gate-source voltage of 10V. It has continuous drain current of 17A and maximum power dissipation of 139W. The MOSFET has a driving voltage of 10V. It utilizes charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• 100% avalanche tested
• High power density
• Higher system reliability at low temperature operation
• Lead (Pb) free
• Low gate noise and switching loss
• Low switching loss
• Lower peak Vds and lower Vgs oscillation
• Operating temperature ranges between -55°C and 150°C
• Optimised capacitance
• Ultra slim
Applications
• Adapter
• Computing
• Industrial power supplies
• LED lighting
• Lighting/charger/adapter
• Telecom/server
• Telecommunication
• Telecommunication/server power supplies
• UPS/solar
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
DatasheetDatasheet FCMT180N65S3| Самовывоз со склада поставщика в Екатеринбурге | Забираете сами или вызываете курьера |
| ТК Деловые Линии | от 500 руб |
| Курьером EMS Почта России | от 500 руб |
| Другой транспортной компанией | По согласованию |