MOSFET Vishay IRFB20N50KPBF, Транзистор

Vishay MOSFET

The Vishay MOSFET is an N-channel, TO-220-3 package is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 250mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 280W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Fully characterized capacitance and avalanche voltage and current
• Improved gate, avalanche and dynamic dV/dt
• Lead (Pb) free component
• Low gate charge Qg results in simple drive requirement
• Low RDS (on)
• Operating temperature ranges between -55°C and 150°C

Applications

• Hard switching and high frequency circuits
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies

Datasheet