Infineon SRAM Memory Chip, CY7C1061GE30-10ZSXI- 16Mbit, Память

CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-detection and correction event during a read cycle.

High speed
tAA = 10 ns/15 ns
Embedded error-correcting code (ECC) for single-bit error
correction[1, 2]
Low active and standby currents
ICC = 90 mA typical at 100 MHz
ISB2 = 20 mA typical
Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5 V to 5.5 V
1.0 V data retention
Transistor-transistor logic (TTL) compatible inputs and outputs
Error indication (ERR) pin to indicate 1-bit error detection and correction
Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages

Datasheet CY7C1061GE30-10ZSXI