* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
1.0 A, 100 V
RDS(on) = 500 mΩ@ VGS = 10 V
RDS(on) = 550 mΩ @ VGS = 6 V
Low gate charge (3.7nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick)
Applications
This product is general usage and suitable for many different applications.
Datasheet FDC3601N| Самовывоз со склада поставщика в Екатеринбурге | Забираете сами или вызываете курьера |
| ТК Деловые Линии | от 500 руб |
| Курьером EMS Почта России | от 500 руб |
| Другой транспортной компанией | По согласованию |