W29N02GVBIAA Memory Size, Winbond SLC NAND 2Gbit Parallel Flash Memory 63-Pin VFBGA, W29N02GVBIAA

Density : 2Gbit (Single chip solution)Vcc : 2.7V to 3.6VBus width : x8Operating temperatureIndustrial: -40°C to 85°CSingle-Level Cell (SLC) technology.OrganizationDensity: 2G-bit/256M-bytePage size2,112 bytes (2048 + 64 bytes)Block size64 pages (128K + 4K bytes)Highest PerformanceRead performance (Max.)Random read: 25usSequential read cycle: 25nsWrite Erase performancePage program time: 250us(typ.)Block erase time: 2ms(typ.)Endurance 100,000 Erase/Program Cycles(2)10-years data retentionCommand setStandard NAND command setAdditional command supportSequential Cache ReadRandom Cache ReadCache ProgramCopy BackTwo-plane operationContact Winbond for OTP featureContact Winbond for block Lock featureLowest power consumptionRead: 25mA(typ.3V)Program/Erase: 25mA(typ.3V)CMOS standby: 10uA(typ.)Space Efficient Packaging48-pin standard TSOP163-ball VFBGA
2Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8Random Read: 25usPage Program Time: 250us(typ.)Block Erase Time: 2ms(typ.)Support OTP Memory Area