W29N08GZBIBA Memory Size, Winbond SLC NAND 8Gbit Parallel Flash Memory 63-Pin VFBGA, W29N08GZBIBA

Density : 8Gbit (2 chip stacked solution)Vcc : 1.7V to 1.95VBus width : x8/x16Operating temperatureIndustrial: -40°C to 85°CSingle-Level Cell (SLC) technology.OrganizationDensity: 8G-bit/1G-bytePage size2,112 bytes (2048 + 64 bytes)1,056 words (1024 + 32 words)Block size64 pages (128K + 4K bytes)64 pages (64K + 2K words)Highest PerformanceRead performance (Max.)Random read: 25usSequential read cycle: 35nsWrite Erase performancePage program time: 250us(typ.)Block erase time: 2ms(typ.)Endurance 100,000 Erase/Program Cycles(1)10-years data retentionCommand setStandard NAND command setAdditional command supportCopy BackTwo-plane operationContact Winbond for OTP featureContact Winbond for Block Lock featureLowest power consumptionRead: 13mA(typ.)Program/Erase: 13mA(typ.)CMOS standby: 20uA(typ.)Space Efficient Packaging48-pin standard TSOP163-ball VFBGA
8Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8Random Read: 25usPage Program Time: 250us(typ.)Block Erase Time: 2ms(typ.)Support OTP Memory Area