W949D2DBJX5I Memory Size, Winbond W949D2DBJX5I, SDRAM 512Mbit Surface Mount, 200MHz, 90-Pin VFBGA

VDD = 1.7∼1.95VVDDQ = 1.7∼1.95VData width: x16 / x32Clock rate: 200MHz (-5),166MHz (-6)Standard Self Refresh ModePartial Array Self-Refresh(PASR)Auto Temperature Compensated Self Refresh (ATCSR)Power Down ModeDeep Power Down Mode (DPD Mode)Programmable output buffer driver strengthFour internal banks for concurrent operationData mask (DM) for write dataClock Stop capability during idle periodsAuto Pre-charge option for each burst accessDouble data rate for data outputDifferential clock inputs (CK and CK)Bidirectional, data strobe (DQS)CAS Latency: 2 and 3Burst Length: 2, 4, 8 and 16Burst Type: Sequential or Interleave8K refresh cycles/64 mSInterface: LVCMOS compatibleSupport package:60 balls VFBGA (x16)90 balls VFBGA (x32)Operating Temperature RangeExtended: -25°C ≤ TCASE ≤ 85°CIndustrial: -40°C ≤ TCASE ≤ 85°C
This is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits.
Burst Type: Sequential or InterleaveStandard Self Refresh ModePASR, ATCSR, Power Down Mode、DPDProgrammable output buffer driver strengthFour internal banks for concurrent operationBidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver