FM18W08-SG Memory Size, Cypress Semiconductor 256kbit Parallel FRAM Memory 28-Pin SOIC, FM18W08-SG

F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM MemoryFast write speedHigh enduranceLow power consumption
256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K font face=\"symbol\""´/font 8High-endurance 100 trillion (1014) read/writes151-year data retentionNoDelay™ writesAdvanced high-reliability ferroelectric processSRAM and EEPROM compatibleIndustry-standard 32 K font face=\""symbol\""´/font 8 SRAM and EEPROM pinout70-ns access time, 130-ns cycle timeSuperior to battery-backed SRAM modulesNo battery concernsMonolithic reliabilityTrue surface mount solution, no rework stepsSuperior for moisture, shock, and vibrationResistant to negative voltage undershootsLow power consumptionActive current 12 mA (max)Standby current 20 μA (typ)Wide voltage operation: VDD = 2.7 V to 5.5 VIndustrial temperature: –40 °C to +85 °C28-pin small outline integrated circuit (SOIC) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.