FM24CL16B-DG Memory Size, Cypress Semiconductor 16kbit I2C FRAM Memory 8-Pin DFN, FM24CL16B-DG

F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM MemoryFast write speedHigh enduranceLow power consumption
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K font face=\"symbol\""´/font 8High-endurance 100 trillion (1014) read/writes151-year data retentionNoDelay™ writesAdvanced high-reliability ferroelectric processFast 2-wire Serial interface (I2C)Up to 1-MHz frequencyDirect hardware replacement for serial (I2C) EEPROMSupports legacy timings for 100 kHz and 400 kHzLow power consumption100 μA active current at 100 kHz3 μA (typ) standby currentVoltage operation: VDD = 2.7 V to 3.65 VIndustrial temperature: –40 °C to +85 °CPackages8-pin small outline integrated circuit (SOIC) package8-pin dual flat no leads (DFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.