FM25V02A-DG Memory Size, Cypress Semiconductor 256kbit SPI FRAM Memory 8-Pin DFN, FM25V02A-DG

F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM MemoryFast write speedHigh enduranceLow power consumption
256-Kbit ferroelectric random access memory (F-RAM)Logically organized as 32K font face=\"symbol\""´/font 8High-endurance 100 trillion (1014) read/writes151-year data retentionNoDelay™ writesAdvanced high-reliability ferroelectric processVery fast serial peripheral interface (SPI)Up to 40-MHz frequencyDirect hardware replacement for serial flash and EEPROMSupports SPI mode 0 (0, 0) and mode 3 (1, 1)Sophisticated write-protection schemeHardware protection using the Write Protect (WP) pinSoftware protection using Write Disable instructionSoftware block protection for 1/4, 1/2, or entire arrayDevice IDManufacturer ID and Product IDLow power consumption2.5-mA active current at 40 MHz150-μA standby current8-μA sleep mode currentLow-voltage operation: VDD = 2.0 V to 3.6 VIndustrial temperature: –40 °C to +85 °CPackages8-pin small outline integrated circuit (SOIC) package8-pin dual flat no-leads (DFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.