* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM MemoryFast write speedHigh enduranceLow power consumption
2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K font face=\"symbol\""´/font 8High-endurance 100 trillion (1014) read/writes151-year data retention (See the Data Retention and Endurance table)NoDelay™ writesAdvanced high-reliability ferroelectric processVery fast SPIUp to 40-MHz frequencyDirect hardware replacement for serial flash and EEPROMSupports SPI mode 0 (0, 0) and mode 3 (1, 1)Sophisticated write protection schemeHardware protection using the Write Protect (WP) pinSoftware protection using Write Disable instructionSoftware block protection for 1/4, 1/2, or entire arrayDevice IDManufacturer ID and Product IDLow power consumption300 μA active current at 1 MHz100 μA (typ) standby current3 μA sleep mode currentLow-voltage operation: VDD = 2.0 V to 3.6 VIndustrial temperature: –40 °C to +85 °CPackages8-pin small outline integrated circuit (SOIC) package8-pin dual flat no leads (DFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Schematic Symbol & PCB Footprint"
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