* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM MemoryFast write speedHigh enduranceLow power consumption
256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K font face=\"symbol\""´/font 8High-endurance 100 trillion (1014) read/writes151-year data retentionNoDelay™ writesPage mode operationAdvanced high-reliability ferroelectric processSRAM compatibleIndustry-standard 32K font face=\""symbol\""´/font 8 SRAM pinout70-ns access time, 140-ns cycle timeSuperior to battery-backed SRAM modulesNo battery concernsMonolithic reliabilityTrue surface mount solution, no rework stepsSuperior for moisture, shock, and vibrationResistant to negative voltage undershootsLow power consumptionActive current 5 mA (typ)Standby current 90 μA (typ)Low-voltage operation: VDD = 2.0 V to 3.6 VIndustrial temperature: –40 °C to +85 °CPackages:28-pin small outline integrated circuit (SOIC) package28-pin thin small outline package (TSOP) Type I32-pin thin small outline package (TSOP) Type I
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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