STMicroelectronics L6491D, MOSFET 1, 4 A, 20V 14-Pin, SO

The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT. The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP. An integrated comparator is available for fast protection against overcurrent, overtemperature, etc.

High voltage rail up to 600 V
dV/dt immunity ± 50 V/ns in full temperature range
Driver current capability: 4 A source/sink
Switching times 15 ns rise/fall with 1 nF load
3.3 V, 5 V TTL/CMOS inputs with hysteresis
Integrated bootstrap diode
Comparator for fault protections
Smart shutdown function
Adjustable deadtime
Interlocking function
Compact and simplified layout
Bill of material reduction
Effective fault protection
Flexible, easy and fast design
Applications
Motor driver for home appliances, factory automation, industrial drives and fans
HID ballasts
Power supply unit
Induction heating
Wireless chargers
Industrial inverters
UPS

Datasheet L6491D