Infineon SRAM Memory Chip, CY7C1049G30-10VXI- 4Mbit, Память

CY7C1049G and CY7C1049GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip-enable options and in multiple pin configurations. The CY7C1049GE device includes an ERR pin that signals an error-detection and correction event during a read cycle. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0through I/O7 and address on A0 through A18 pins. Data reads are performed by asserting the Chip Enable (CE) and Output Enable (OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7).

High speed
tAA = 10 ns
Embedded ECC for single-bit error correction[1, 2]
Low active and standby currents
Active current: ICC = 38 mA typical
Standby current: ISB2 = 6 mA typical
Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and4.5 V to 5.5 V
1.0-V data retention
TTL-compatible inputs and outputs
Error indication (ERR) pin to indicate 1-bit error detection and correction
Pb-free 36-pin SOJ and 44-pin TSOP II packages

Datasheet CY7C1049G30-10VXI