Cypress Semiconductor NOR 1024Mbit CFI Flash Memory 64-Pin BGA, S29GL01GT11FHIV10, Флэш-память

54 nm MirrorBit Eclipse Technology
Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
Versatile I/O feature
Wide I/O voltage range (VIO): 1.65 V to VCC
x8/x16 data bus
Asynchronous 32-byte Page read
512-byte Programming Buffer
Programming in to a maximum of 512 bytes
Single word and multiple program on same word options
Automatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correction
Sector Erase
Uniform 128-KB sectors
Suspend and Resume commands for Program and Erase operations
Status Register, Data Polling and Ready/Busy pin methods to determine device status
Advanced Sector Protection (ASP)
Volatile and non-volatile protection methods for each sector
Separate 2048-byte One-Time Program (OTP) array
Four lockable regions (SSR0 - SSR3)
SSR0 is Factory Locked
SSR3 is Password Read Protect
Common Flash Interface (CFI) parameter table
Temperature Range / Grade:
Industrial (-40 °C to +85 °C)
Industrial Plus (-40 °C to +105 °C)
Extended (-40 °C to +125 °C)
100,000 Program / Erase Cycles
20-year data retention፤

Datasheet S29GL01GT10FHI010