* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
The S29GL-N family of devices are 3.0V single-power Flash memory manufactured using 110nm MirrorBit technology. TheS29GL064N is a 64Mb device organized as 4,194,304 words or 8,388,608 bytes. Depending on the model number, the devices have 16bit wide data bus only or a 16bit wide data bus that can also function as an 8bit wide data bus by using the BYTE# input. The devices can be programmed in the host system or in standard EPROM programmers. Access times as fast as 90ns are available. Each access time has a specific VCC. Package offerings include 48pin TSOP, 56pin TSOP, 48-ball fine-pitch BGA and 64-ball Fortified BGA depending on model number. Each device has separate chip enable, write enable and output enable controls.
Each device requires only a single 3.0V power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program feature provides shorter programming times through increased voltage on theWP#/ACC or ACC input. This feature facilitates factory throughput during system production but may also be used in the field if desired. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.
Datasheet S29GL032N90BFI030
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