Infineon SRAM Memory Chip, CY7C1021D-10VXI- 1Mbit, Память

This device has an automatic power down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15).

Datasheet CY7C1021D-10VXI