AFGHL50T65SQDC Transistor Type, onsemi AFGHL50T65SQDCOS NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247

Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.
Copacked with SiC schottky barrier diodeUltra low reverse recovery lossMaximum Junction Temperature, Tj=175°CHigher reliabilityVery low switching and conduction lossesPositive temperature co-efficientTight parameter distributionApplicationsAutomotiveIndustrial InverterDC-DC ConverterPFC, Totem Pole BridgelessHard Switching