* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
The Renesas Electronics HIP1020 applies a linear voltage ramp to the gates of any combination of 3.3V, 5V, and 12V MOSFETs. The internal charge pump doubles a 12V bias or triples a 5V bias to deliver the high-side drive capability required when using more cost-effective N-Channel MOSFETs. The 5V/ms ramp rate is controlled internally and is the proper value to turn on most devices within the Device-Bay-specified di/dt limit. If a slower rate is required, the internally-determined ramp rate can be over ridden using an optional external capacitor.
Rise Time Controlled to Device-Bay Specifications
No Additional Components Required
Internal Charge Pump Drives N-Channel MOSFETs
Drives any Combination of One, Two or Three Outputs
Internally-Controlled Turn-On Ramp
Prevents False Turn on During Hot Insertion
Operates using 12V or 5V Bias
Datasheet - HIP1020CKZ-T| Самовывоз со склада поставщика в Екатеринбурге | Забираете сами или вызываете курьера |
| ТК Деловые Линии | от 500 руб |
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| Другой транспортной компанией | По согласованию |