STMicroelectronics 650V 10A, Diode, 2-Pin PowerFLAT STPSC10H065DLF

The STMicroelectronics SiC diode is an ultra-high performance power Schottky diode, manufactured using a silicon carbide substrate. It has a wide band gap material that allows the design of a Schottky diode structure with a 650 V rating. No recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature, due to the schottky construction.

Less than 1 mm height package
High creep age package
No or negligible reverse recovery
Temperature independent switching behaviour
High forward surge capability
Very low drop forward voltage
Power efficient product
ECOPACK2 compliant component

Datasheet - STPSC10H065DLF