EVAL3K3WBIDIPSFBTOBO1, Infineon EVAL_3K3W_BIDI_PSFB DC-DC Converter for Industrial, Power Supplies

3300W 54V bi-directional phase-shift full-bridge (PSFB) evaluation board with 600V CoolMOS™ CFD7 and XMC™

This evaluation board introduces a highly efficient complete Infineon system solution for a 3300W bi-directional DC-DC converter targeting telecom, battery formation power and industrial robotics applications.
Infineon’s 600V CoolMOS™ CFD7 superjunction MOSFET in ThinPAK package is the most recent and best performance fast body diode device. Combined with a low parasitic package and an optimized layout, it achieves great performance with minimum stress. The innovative cooling concept presented in this board enables its remarkable performance.
This board achieves 98% efficiency in buck mode and 97% in boost mode. The attained power density is in the range of 4.34W/cm³ (71.19W/in³), which is enabled by the use of SMD packages and the innovative stacked magnetic construction.

When combined with the latest technologies from Infineon, this DC-DC converter proves the feasibility and high efficiency of PSFB designs at the level of fully resonant topologies.
The EVAL_3K3W_BIDI_PSFB shows as well that the PSFB topology can be used as a bi-directional DC-DC stage without changes in the standard design or construction of a traditional and well known topology. This is achieved thanks to innovations in control techniques powered by digital control and XMC™ microcontrollers.

Summary of features

•High efficiency PSFB
•High power density PSFB
•Bi-directional PSFB
•Digital controlled PSFB
•Novel integrated magnetics concept
•Novel SMD cooling concept

Summary of benefits

•Best and latest fast body diode HV technology from Infineon
•Best and latest LV synchronous rectifiers technology from Infineon
•Bi-directional capability of PSFB (patented)
•Novel integrated magnetics concept
•Novel SMD cooling concept

List of components

•600V CoolMOS™ CFD7 superjunction MOSFET (IPL60R075CFD7) 222-4912
•CoolSiC™ Schottky diode 650V G6 (IDH08G65C6) 216-8382
•800V CoolMOS™ superjunction MOSFET (IPU80R4K5P7) 222-4717
•150V OptiMOS™ 5 power MOSFET in Super SO-8 package (BSC093N15NS5) 214-4325
•EiceDRIVER™ 2EDS isolated gate driver IC (2EDS8265H) 258-0627
•EiceDRIVER™ 2EDF isolated gate driver IC (2EDF7275F) 244-0940
•XMC4200 microcontroller for control implementation (XMC4200-F64k256BA) 258-1749
•Quasi-resonant flyback PWM controller (ICE5QSAG)
•Medium power AF Schottky diode (BAT165) 249-6997
•DC-DC step-down voltage regulator (IFX91041EJV33)

Datasheet - EVAL3K3WBIDIPSFBTOBO1