N-Channel MOSFET Transistor & Diode, 16 A, 650 V, 3-Pin SOT-223 Infineon IPN60R600P7SATMA1

The Infineon Cool MOS P7 super junction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes Cool MOS P7 in SOT-223 a perfect fit for its target applications. The 700V and 800V Cool MOS P7 are optimized for fly back topologies. 600V Cool MOS P7 SJ MOSFET is suitable for hard as well as so switching topologies (Fly back, PFC and LLC).

Ease of use and fast design-in through low ringing tendency and usage
 across PFC and PWM stages
Simplified thermal management due to low switching and conduction
 losses
Increased power density solutions enabled by using product swith
 smaller foot print and higher manufacturing quality due to>2kVESD
 protection
Suitable for awide variety of applications and power ranges

Datasheet - IPN60R600P7SATMA1