Infineon BGSX22G5A10E6327XTSA1 RF Switch Circuit, 10-Pin ATSLP-10-50

The Infineon BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V.

RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm
Ultra-low insertion loss and harmonics generation
0.1 to 6.0 GHz coverage
High port-to-port-isolation
No decoupling capacitors required if no DC applied on RF lines
General Purpose Input-Output (GPIO) Interface
Small form factor 1.1mm x 1.5mm
No power supply blocking required

Datasheet - BGSX22G5A10E6327XTSA1