EVAL1ED3491MX12MTOBO1 Power Management Function, Infineon EVAL1ED3491MX12MTOBO1 MOSFET Gate Driver for 1ED3491MX12M for Motors

The Infineon EVAL-1ED3491MX12M is in half-bridge configuration with two gate driver ICs (1ED3491MU12M) to drive power switches such as Si MOSFETs, IGBTs and SiC MOSFETs. The switch type can be freely chosen. The board has a size of 85 x 55 x 15 mm without any power switch assembled. TRENCHSTOP IGBT IKW40N120H3 or CoolSiC MOSFET IMW120R030M1H is recommended. This board is best suited for double pulse testing and evaluation. The low voltage supply interface can be controlled by a pulse generator, a microcontroller or any other suitable digital circuit. The evaluation board has a power supply for the primary and secondary sides implemented.
Over-temperature shut down at 160 °C (±10 °C)Tight IC-to-IC propagation delay matching (30 ns max)High common-mode transient immunity CMTI 200 kV/μsSuitable for operation at high ambient temperature up to 125 °CEnable fast design cycles due to low external component count and still offers adjustable DESAT with Soft-off functionality
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