Alliance Memory AS4C4M16SA-6TIN, SDRAM 64Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

The Alliance Memory 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented
accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command.

Fast access time from clock: 4.5/5.4/5.4 ns
Fast clock rate: 200/166/143 MHz
Fully synchronous operation
Internal pipelined architecture
1M word x 16-bit x 4-bank

Datasheet - AS4C4M16SA-6TIN