Silicon N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IMW65R107M1HXKSA1

The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 3-pin package. The CoolSiC MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.

Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard drivers

Datasheet - IMW65R107M1HXKSA1