* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
The Infineon OptiMOS™ PD N-channel power MOSFET targets USB-PD and adapter applications. The product offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction and features quality products in compact, lightweight packages. It has 40A maximum continuous drain current and 100V maximum drain source voltage It is ideal for high-frequency switching and optimized for chargers.
Logic level availability
Low on-state resistance RDS(on)
Low gate, output and reverse recovery charge
Excellent thermal behaviour
100% avalanche tested
Pb-free lead plating
Halogen-freeaccordingtoIEC61249-2-21
RoHS compliant
Available in 2 small standard packages
Datasheet - BSZ0803LSATMA1Datasheet - BSZ0803LSATMA1