N-Channel MOSFET, 230 A, 100 V, 8-Pin SuperSO8 5 x 6 Infineon ISC022N10NM6ATMA1

OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package

ISC022N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.
Infineon’s OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the ideal choice for other applications such as solar, power tools and drones.
In the SuperSO8 package it achieves ∼20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.

Summary of Features

Compared to OptiMOS™ 5, the new technology achieves:
•∼20% lower RDS(on)
•30% improved FOMg and 40% better FOMgd
•Lower and softer reverse recovery charge (Qrr)
•Ideal for high switching frequency
•MSL 1 classified according to J-STD-020
•175 °C junction temperature rating
•High avalanche energy rating
•Pb-free lead plating
•RoHS compliant

Benefits

•Low conduction losses
•Low switching losses
•Fast turn on and off
•Less paralleling required
•Robust reliable performance
•Environmentally friendly
•Less paralleling required

Datasheet - ISC022N10NM6ATMA1