STMicroelectronics STGAP2SICDTR, 4 A, 3.1 V, 5.5 V 36-Pin, SO-36W

The STMicroelectronics STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making it suitable for mid and high power applications such as power conversion and industrial motor drivers inverters. The separated output pins allow to independently optimize turn-on and turn-off by using dedicated gate resistors, while the Miller CLAMP function allows avoiding gate spikes during fast commutations in half-bridge topologies. The device integrates protection functions: dedicated SD and BRAKE pins are available, UVLO and thermal shutdown are included to easily design high reliability systems.

4 A Miller CLAMP
UVLO function
Configurable interlocking function
Dedicated SD and BRAKE pins
Gate driving voltage up to 26 V
3.3 V, 5 V TTL/CMOS inputs with hysteresis
Temperature shutdown protection
Standby function
6 kV galvanic isolation
Wide Body SO-36W

In half-bridge topologies the interlocking function prevents outputs from being high at the same time, avoiding shoot-through conditions in case of wrong logic input commands. The interlocking function can be disabled by a dedicated configuration pin, allowing independent and parallel operation of the two channels. The input to output propagation delay results are contained within 75 ns, providing high PWM control accuracy. A standby mode is available in order to reduce idle power consumption.

Datasheet - STGAP2SICDTR