* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
The ON Semiconductor high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in narrow−body SOIC−8 package.
High Peak Output Current (+6.5 A/−6.5 A)
Low Clamp Voltage Drop Eliminates the Need of Negative Power
Supply to Prevent Spurious Gate Turn−on (Version A)
Short Propagation Delays with Accurate Matching
IGBT/MOSFET Gate Clamping during Short Circuit
IGBT/MOSFET Gate Active Pull Down
Tight UVLO Thresholds for Bias Flexibility
Wide Bias Voltage Range including Negative VEE2 (Version B)
3.3 V, 5 V, and 15 V Logic Input
3.75 kVRMS VISO (I−O) (to meet UL1577 Requirements)
Datasheet - NCV57081ADR2G
Самовывоз со склада поставщика в Екатеринбурге | Забираете сами или вызываете курьера |
ТК Деловые Линии | от 500 руб |
Курьером EMS Почта России | от 500 руб |
Другой транспортной компанией | По согласованию |