* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
The Infineon CoolSiC™ evaluation platform second revision in a high-side / low-side configuration with two gate driver ICs (1ED020I12-F2). This platform is developed to show the optimal driving of the CoolSiC™ MOSFETs or other power switches like IGBT and MOSFET in TO247 3-pin or 4-pin package. To achieve this target the design was split in two boards, one motherboard EVAL-PS-DP-MAIN and one daughter board, EVAL-1ED020I12F2-DB. The modular approach enables future expansion of the platform with additional gate driver cards. The switch type can be freely chosen. Support Isolated gate driver daughter board using 1ED020I12-F2 to evaluate 1200 V CoolSiC™ MOSFET. The EVAL-1ED020I12F2-DB is part of the CoolSiC™ evaluation platform second revision in a high-side / low-side configuration with two gate driver ICs (1ED020I12-F2).
Single channel isolated gate driver IC (1ED-F2)
2 A rail-to-rail typical output current
Precise DESAT protection, VCEsat detection
Active Miller Clamp
Active shutdown and Short circuit clamping
28 V absolute Max. output supply voltage
170/165 ns typ. propagation delay
This platform is developed to show the optimal driving of the CoolSiC™ MOSFETs or other power switches like IGBT and MOSFET in TO247 3-pin or 4-pin package. To achieve this target the design was split in two boards, one motherboard EVAL-PS-DP-MAIN and one
Техническая спецификация
Datasheet - EVAL1ED020I12F2DBTOBO1| Самовывоз со склада поставщика в Екатеринбурге | Забираете сами или вызываете курьера |
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