EVAL1EDFG1BHBGANTOBO1, Infineon EVAL_1EDF_G1B_HB_GAN Half-Bridge Driver for 1EDF5673K EiceDRIVER™ GaN gate driver IC

The Infineon high-frequency half-bridge evaluation board featuring EiceDRIVER™ GaN, the half-bridge circuit platform features a single PWM input intended for the connection of a 50Ω pulse generator. The design is powered from a single 5V supply input, which powers everything, including the isolated gate driver power supplies. Dead time between the high- and low-side is initially set to 100ns but is trim pot-adjustable. An external inductor can be connected using the supplied pluggable connector. The output and bus voltage can range up to 450V, limited by the capacitor rating. This half-bridge can switch continuous currents of 12A and peak currents of 35A, hard or soft-switching. Operating frequency can be up to several MHz, depending on transistor dissipation (limited to about 15W per device with appropriate heatsink and airflow). This system solution is available as Hardware Board or Reference Design.

Simple GaN half-bridge with dedicated GaN driver Ics
Capable of multi-MHz switching frequencies
Zero reverse-recovery – can shift between hard- or soft-switching
GaN transistors feature top-side cooling for high power dissipation

Datasheet - EVAL1EDFG1BHBGANTOBO1