N-Channel MOSFET, 38 A, 650 V TO247-4L onsemi NTH4L075N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L

The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in telecommunication
High reliability at high temperature ambient
High speed switching and low capacitance

Datasheet - NTH4L075N065SC1