Renesas Electronics HIP2100IBZT7A, 9 → 14V dc 8-Pin, SOIC

The Renesas half bridge driver is a high frequency, 100V half bridge N-channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under voltage of the high-side supply.

Drives N-channel MOSFET half bridge
Pb-free (RoHS compliant)
Bootstrap supply max voltage to 114VDC
On-chip 1Ω bootstrap diode
Fast propagation times for multi-MHz circuits
Drives 1000pF load with rise and fall times typ of 10ns
CMOS input thresholds for improved noise immunity
Low Power Consumption
Wide Supply Range
Supply Under voltage Protection

Datasheet - HIP2100IBZT7A