Infineon BGS12PN10E6327XTSA1High Side, High Side Power Control Switch

The Infineon SPDT high linearity, high power RF switch is a single pole dual throw high power RF switch optimized for mobile phone applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, CMOS or TTL compatible control input signal. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.

No power supply blocking required
No insertion loss change within supply voltage range
No linearity change within supply voltage range
Suitable for EDGE / C2K / LTE / WCDMA / SV-LTE Applications
Mobile cellular Rx/Tx applications, suitable for LTE/3G

Datasheet - BGS12PN10E6327XTSA1