N-Channel MOSFET, 205 A, 40 V PG-TTFN Infineon IQE013N04LM6CGATMA1

The Infineon OptiMOS power MOSFET 40V in a 3.3x3.3 PQFN Source-Down Centre-Gate package. This best-in-class power MOSFET challenges the status quo in power density and form factor in the end application. One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling an ergonomic design and optimizing the end user experience. Moving the inverter from the handle into the head simultaneously minimizes the volume of the power tool motor housing while keeping the torque of the tool at a reasonably high level for quick and easy action.

High current capability
More efficient use of PBC area
Highest power density and performance
Optimized footprint for MOSFET parallelization with centre-gate

Datasheet - IQE013N04LM6CGATMA1