EB2ED24103D1BCDTOBO1, Infineon EB 2ED2410 3D 1BCD MOSFET Gate Driver for Gate Driver, Power MOSFET for Evaluation Mother/Daughterboards User

EiceDRIVER™ APD 2ED2410-EM - 24 V evaluation MOSFET daughterboard, common drain

This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard(EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets.

This daughterboard EB 2ED2410 3D 1BCD is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common drain configuration.

Following other daughterboards are available:

•EB 2ED2410 3D 1BCS: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCDP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging

Summary of Features

•Suitable for 12 and 24 V board nets
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0,5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Nominal current up to 20 A continuous or 30 A for 10 min

Datasheet - EB2ED24103D1BCDTOBO1