EB2ED24103D1BCSPTOBO1, Infineon EB 2ED2410 3D 1BCSP MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard

EiceDRIVER™ APD 2ED2410-EM - 24 V evaluation MOSFET daughterboard, common source, pre-charging

This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets.

This daughterboard EB 2ED2410 3D 1BCDP is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common source configuration. In addition, the load could be pre-charged with a dedicated pre-charge path.

Following other daughterboards are available:

•EB 2ED2410 3D 1BCS:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt

•EB 2ED2410 3D 1BCD:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt

•EB 2ED2410 3D 1BCDP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging

Summary of Features

•Suitable for 12 and 24 V board nets

•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)

•0,5 mOhm shunt resistor

•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets

•MOSFET temperature monitoring with NTC resistors

•Dedicated pre-charge path for loads with high input capacitance

•Nominal current up to 20 A continuous or 30 A for 10 min

Datasheet - EB2ED24103D1BCSPTOBO1