* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It is ideal for code shadowing, XIP, and data storage. Executing code directly from flash memory is often called execute in Place. By using FL-S devices at the higher clock rates supported, with QIO command, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.
CMOS 3.0 V core
Minimum 20 year data retention
Minimum 100000 program erase cycles
Hardware and software control options
SPI clock polarity and phase modes 0 and 3
Datasheet - S25FL127SABMFI100
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