* УТОЧНЯЙТЕ ВОЗМОЖНОСТЬ, ЦЕНУ И СРОК ПОСТАВКИ, В СВЯЗИ С ОГРАНИЧЕНИЕМ ЭКСПОРТА ТОВАРОВ ИЗ СТРАН ЕС И ВЕЛИКОБРИТАНИИ
The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It is ideal for code shadowing, XIP, and data storage. Executing code directly from flash memory is often called execute in Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.
Advanced sector protection
CMOS 3.0 V core with versatile I/O
Minimum 20 year data retention
Minimum 100000 program erase cycles
SPI clock polarity and phase modes 0 and 3
Datasheet - S25FL256SAGBHI200
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