Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 onsemi FDC6305N, МОП-транзистор

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

The FDC6305N is an N-Channel MOSFET featuring a low threshold. Designed with PowerTrench® technology it boasts minimise on-state resistance and low-gate charge for superior switching performance.

Features and Benefits:

•\tLow gate charge
•\tFast switching speed
•\tPowerTrench® technology
•\tSuper small footprint. 72% smaller than a SO08.

The FDC6305N is typically used in these applications;
•\tLoad switching
•\tDC/DC Converters
•\tMotor Driving

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

FDC6305N, Dual N-Channel 2.5V Specified PowerTrench MOSFET

ESD Control Selection Guide V1